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- W2022674346 abstract "The electron cyclotron resonance microwave plasma chemical vapor deposition (ECRPCVD) method has been applied to prepare a-Si:H films. A high deposition rate of 136 nm/min was achieved. Even without substrate heating and with the high deposition rate, a-Si:H films prepared by ECRPCVD have sufficient characteristics, as follows: the dark conductivity is 3-4×10 -10 S/cm, ηµτ is 4.2×10 -5 cm 2 /V and the optical band-gap is 1.81 eV. Furthermore, the electric characteristics are somewhat improved with substrate heating. Hydrogenated amorphous silicon films prepared by ECRPCVD without substrate heating and with a high deposition rate of 136 nm/min have been applied to ITO/a-Si:H/Cr Schottky-barrier photodiodes. These photodiodes have sufficient characteristics to be applied to image sensors for a facsimile reader and other systems." @default.
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- W2022674346 date "1987-02-01" @default.
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- W2022674346 title "Characteristics of Hydrogenated Amorphous Silicon Films Prepared by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition Method and Their Application to Photodiodes" @default.
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- W2022674346 doi "https://doi.org/10.1143/jjap.26.202" @default.
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