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- W2022676073 abstract "We analyse the adequacy of the single-band model in Si based resonant tunneling devices (RTD's) as opposed to a multi-band model which is closer to real systems due to the fact that Si is an indirect bandgap semiconductor. Our calculations based on non-equilibrium Green function formalism show that a single band model with tunneling light electrons in Si is quantitatively sound in simulating Si based RTD's. It is found that light electrons contribute not only through 2-dimensional (2D) transverse density of states but also through the transparency of the barriers. Thus a single-band model can be safely used in applications." @default.
- W2022676073 created "2016-06-24" @default.
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- W2022676073 date "2010-10-01" @default.
- W2022676073 modified "2023-09-23" @default.
- W2022676073 title "Quantitative assessment of the single-band model in the silicon based resonant tunneling devices" @default.
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- W2022676073 doi "https://doi.org/10.1109/smicnd.2010.5650568" @default.
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