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- W2022689234 abstract "We report sharp electroluminescence lines from individual self-assembled InAs quantum dots (QDs) excited by resonant tunneling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. Bias-tunable tunneling of carriers into the dots provides a means of controlling injection and light emission from a small number of individual dots within a large ensemble. We also show that the extent of carrier energy relaxation prior to recombination can be controlled by tailoring the morphology of the QD layer." @default.
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- W2022689234 date "2006-08-28" @default.
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- W2022689234 title "Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers" @default.
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