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- W2022697771 abstract "Ion impact induced desorption (IID) study of the surface of nanocrystalline silicon (nc-Si) revealed a high concentration of hydrogen of ≤10 15 cm −2 within the near-surface layer. This result supports the suggested mechanism of the film growth and it also provides an explanation of the remarkable stability of such films against oxidation." @default.
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- W2022697771 date "1987-10-01" @default.
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- W2022697771 title "Ion impact induced desorption study of the surface of plasma-deposited nanocrystalline silicon" @default.
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- W2022697771 doi "https://doi.org/10.1016/s0039-6028(87)80535-6" @default.
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