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- W2022705403 abstract "An abnormal base current behavior with an ideality of about 3 is often observed in the AlGaAs/GaAs HBT after it is subjected to a high temperature/electrical burn-in condition. Using a two-dimensional device simulator, this paper studies and determines the main physical mechanisms contributing to such an abnormality. Data measured from two post-burn-in HBTs are included in support of the finding." @default.
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- W2022705403 date "1998-02-01" @default.
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- W2022705403 title "Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs" @default.
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- W2022705403 doi "https://doi.org/10.1016/s0026-2714(97)00071-1" @default.
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