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- W2022731436 abstract "Recent advances in the understanding of the relationship between implanted dopant solubility and electrical activity in GaAs are reviewed and direct lattice configuration measurements explaining these results are presented. The nature of residual defects remaining after activation annealing of GaAs, in particular rapid thermal annealing, are discussed, along with a review of the application of ion beams in promoting compositional disordering of GaAs-AlAs superlattices. The outstanding problems remaining in the use of ion implantation technology for GaAs are also detailed." @default.
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- W2022731436 date "1987-01-01" @default.
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- W2022731436 title "Ion implantation in GaAs" @default.
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- W2022731436 doi "https://doi.org/10.1016/s0168-583x(87)80074-5" @default.
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