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- W2022731723 abstract "The use of Alternating phase-shifting mask has been demonstrated to be a most powerful approach to expand resolution limitation and expand the process window of lithography. But the phase conflict problem limits the application of alt-PSM. For dark field alt-PSM, node connection PSM is a feasible method to solve the problem. We investigate the application of this method at 100nm node by simulation with ArF light source. The results prove that alt-PSM with conventional partial coherence illumination can be applied in the manufacturing of random interconnect layer. This method can expand the process window effectively. The program that can achieve the pattern decomposition automatically is also developed. We’re sure that combined with optical proximity effect correction, this multi-exposure technology can fulfill the need of 0.1-μm generation logic IC lithography." @default.
- W2022731723 created "2016-06-24" @default.
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- W2022731723 date "2005-01-27" @default.
- W2022731723 modified "2023-09-23" @default.
- W2022731723 title "Method of printing 100-nm random interconnect pattern with alt-PSM" @default.
- W2022731723 doi "https://doi.org/10.1117/12.572232" @default.
- W2022731723 hasPublicationYear "2005" @default.
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