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• W2022752356 startingPage "675" @default.
• W2022752356 abstract "Fourier transform infrared spectroscopy (FTIR) was used to investigate the hydrogenation of the silicon surface after the etch-back of an oxide layer and during photoelectrochemically induced roughening and smoothing treatments in an acidic fluoride containing solution. In case of the low ir-absorption of the SiH stretching mode we applied multiple internal reflection techniques (MIR), whereas single internal reflection was used to monitor the formation of silicon oxide during light-assisted oxidation in this solution. The microtopography of the Si(111)-surface is strongly influenced by the applied electrode potential under illumination and was inspected by use of field emission scanning electron microscopy (SEM) with a resolution of about 2 nm. The surface condition is changed between microscopically flat and rough (both SiH covered) or oxidized at higher anodic potentials (eletropolishing and photocurrent oscillations). Hydrogen-termination of the Si-surface was preserved even under low anodic currents in spite of the high etching rate in alkaline solutions." @default.
• W2022752356 created "2016-06-24" @default.
• W2022752356 creator A5051463549 @default.
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• W2022752356 date "1996-04-01" @default.
• W2022752356 modified "2023-10-10" @default.
• W2022752356 title "In situ FTIR investigation of the electrochemical microstructuring of n-Si(111)" @default.
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• W2022752356 doi "https://doi.org/10.1016/0013-4686(95)00355-x" @default.
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