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• W2022752632 endingPage "3256" @default.
• W2022752632 startingPage "3256" @default.
• W2022752632 abstract "We present the fabrication process of narrow quantum wires in both In 1- x Ga x As/InP and GaAs/Ga 1- x Al x As systems based upon e-beam lithography, lift-off, reactive ion etching and MOCVD overgrowth. The carrier lifetime, deduced from low temperature time-resolved photoluminescence, remains of the order of one nanosecond in both systems, showing the good quality of the overgrown interfaces. An efficient capture of the carriers created in the barrier material into the wires is demonstrated. One-dimension quantum confinement effects are observed for the lowest lateral sizes: in In 1- x Ga x As/InP wires (width down to 15 nm), quantum shifts of the low temperature cw photoluminescence peak (up to 30 meV) are observed while in GaAs/Ga 1- x Al x As wires (width down to 20 nm), we report shifts up to 10 meV of the emission peak." @default.
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• W2022752632 date "1991-11-01" @default.
• W2022752632 modified "2023-09-27" @default.
• W2022752632 title "Fabrication and Luminescence of Narrow Reactive Ion Etched In_1-xGa_xAs/InP and GaAs/Gas_1-xAl_xAs Quantum Wires" @default.
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• W2022752632 doi "https://doi.org/10.1143/jjap.30.3256" @default.
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