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• W2022771263 endingPage "L688" @default.
• W2022771263 startingPage "L688" @default.
• W2022771263 abstract "Room-temperature (20° C) epitaxy of high-melting point CeO 2 thin films was achieved for the first time on Si(111) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO 2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface." @default.
• W2022771263 created "2016-06-24" @default.
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• W2022771263 date "1995-06-01" @default.
• W2022771263 modified "2023-09-27" @default.
• W2022771263 title "Room-Temperature Epitaxial Growth of CeO₂ Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface" @default.
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• W2022771263 doi "https://doi.org/10.1143/jjap.34.l688" @default.
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