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- W2022776007 abstract "The optical properties of graded In x Ga 1-x As/GaAs high electron mobility transistors (g-HEMTs) with different channel-band slopes are characterized by making photoreflectance (PR) and photoluminescence (PL) measurements at 300 K. Analyses of experimental PL and PR spectra clarify the channel-well transitions and the built-in electric fields of g-HEMTs. The numbers of channel-well transitions for two channel band-slope g-HEMTs of the same indium composition differ because the effects of In segregation on the growth of graded In x Ga 1-x As channel layers of opposite gradient differ. Intersubband energies, the Fermi-level energy, the sheet carrier density of two-dimensional-electron gas, and the built-in electric fields of three g-HEMTs with three different channel-band slopes are evaluated. The device characteristics are also discussed." @default.
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- W2022776007 date "2006-01-01" @default.
- W2022776007 modified "2023-09-23" @default.
- W2022776007 title "Photoreflectance and Photoluminescence Study of In[sub x]Ga[sub 1−x]As∕GaAs Graded-Channel High Electron Mobility Transistors" @default.
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- W2022776007 doi "https://doi.org/10.1149/1.2347099" @default.
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