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- W2022781726 abstract "In recent years, many novel materials of interest to the opto-electronics community have emerged. Extensive research of the newly introduced materials in the form of epitaxial thin films and heterostructures requires a rapid prototyping technique. The pulsed laser deposition (PLD) technique is well suited for such rapid and controlled growth of multilayers, demanding lesser parameter optimization effort than the conventional MBE and MOCVD processes. We have used the PLD technique to deposit epitaxial films of TiN, AIN, GaN films and heterostructures on sapphire substrates. The films were characterized by X-ray diffraction (XRD), Rutherford backscattering/channeling (RBS), transmission electron microscopy (TEM), electrical, and spectrophotometric measurements, which indicate a high degree of epitaxy and crystal quality." @default.
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- W2022781726 date "1998-01-02" @default.
- W2022781726 modified "2023-10-17" @default.
- W2022781726 title "<title>Pulsed laser deposition of TiN, AIN, and GaN films on sapphire</title>" @default.
- W2022781726 doi "https://doi.org/10.1117/12.345376" @default.
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