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- W2022784881 abstract "The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the InxGa1−xAs base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased." @default.
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- W2022784881 date "2014-10-27" @default.
- W2022784881 modified "2023-10-16" @default.
- W2022784881 title "Analysis of different tunneling mechanisms of InxGa1−xAs/AlGaAs tunnel junction light-emitting transistors" @default.
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- W2022784881 doi "https://doi.org/10.1063/1.4898342" @default.
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