Matches in SemOpenAlex for { <https://semopenalex.org/work/W2022785624> ?p ?o ?g. }
- W2022785624 abstract "A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼104), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers." @default.
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- W2022785624 date "2014-01-20" @default.
- W2022785624 modified "2023-10-16" @default.
- W2022785624 title "Resistive switching memories in MoS2 nanosphere assemblies" @default.
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- W2022785624 doi "https://doi.org/10.1063/1.4862755" @default.
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