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• W2022787752 abstract "Single electron transistors (SETs) are considered to be promising building blocks for post CMOS era electronic devices, however, a major bottleneck for practical realization of SET based devices is a lack of a parallel fabrication approach. Here, we have demonstrated a technique for the scalable fabrication of SETs using single-walled carbon nanotubes (SWNTs). The approach is based on the integration of solution processed individual SWNTs via dielectrophoresis (DEP) at the selected position of the circuit with a 100 nm channel length, where the metal-SWNT Schottky contact works as a tunnel barrier. Measurements carried out at a low temperature (4.2 K) show that the majority of the devices with a contact resistance (RT) > 100 kΩ display SET behavior. For the devices with 100 kΩ < RT < 1 MΩ, periodic, well-defined Coulomb diamonds with a charging energy of ∼14 meV, corresponding to the transport through a single quantum dot (QD) was observed. For devices with high RT (>1 MΩ) multiple QD behavior was observed. From the transport study of 50 SWNT devices, a total of 38 devices show SET behavior giving a yield of 76%. The results presented here are a significant step forward for the practical realization of SET based devices." @default.
• W2022787752 created "2016-06-24" @default.
• W2022787752 creator A5034213624 @default.
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• W2022787752 date "2015-01-01" @default.
• W2022787752 modified "2023-10-01" @default.
• W2022787752 title "Towards parallel fabrication of single electron transistors using carbon nanotubes" @default.
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• W2022787752 doi "https://doi.org/10.1039/c4nr07540d" @default.
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• W2022787752 hasPublicationYear "2015" @default.
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