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- W2022810143 abstract "In this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry." @default.
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- W2022810143 date "2007-12-01" @default.
- W2022810143 modified "2023-10-06" @default.
- W2022810143 title "Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application" @default.
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- W2022810143 doi "https://doi.org/10.1016/j.tsf.2007.06.131" @default.
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