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- W2022853150 abstract "Thin films of CeAl3 on sapphire were prepared by metallic coevaporation and in vacuo annealing. Highly oriented growth with the hexagonal crystal basal plane parallel to the substrate lane was observed. The resistivity versus temperature curves of the best films were similar to bulk CeAl3, including a T2 dependence below 0.3 K. Transverse magnetoresistivity and Hall effect were measured in fields to 23 T and at temperatures down to 70 mK. Transverse magnetoresistivity was highly dependent on magnetic field orientation with respect to the basal plane. With the field perpendicular to the basal plane, the low-field magnetoresistivity became positive below 5 K, and the high-field magnetoresistivity exhibited a temperature-dependent maximum. With the field in the basal plane, the low-field magnetoresistivity remained negative down to 2 K, below which it exhibited a temperature-independent maximum at 1.8 T. The high-field Hall coefficient below 5 K decreased with field in a temperature-dependent manner, but was temperature-independent at all fields below 800 mK." @default.
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- W2022853150 date "1990-08-01" @default.
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- W2022853150 title "High-field hall effect and crystal orientation dependence of magnetoresistance in thin films of CeAl3" @default.
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