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• W2022864580 abstract "We demonstrate high-quality monocrystalline NbN films deposited by DC magnetron sputtering on a GaN/AlN waveguiding heterostructure. NbN layers with a thickness of 8 nm are grown along the [111] direction, and show two orientation domains with NbN(111) [2-1-1]//AlN (0001) [10-10] and NbN(111) [2-1-1]//AlN(0001) [01-10] epitaxial relationships. Our NbN films display a critical temperature of 13.2 K, with the superconducting transition taking place in a temperature range of only 0.7 K." @default.
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• W2022864580 date "2014-10-01" @default.
• W2022864580 modified "2023-10-16" @default.
• W2022864580 title "High-quality NbN nanofilms on a GaN/AlN heterostructure" @default.
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• W2022864580 doi "https://doi.org/10.1063/1.4898327" @default.
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