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• W2022881126 abstract "We have investigated an elliptic-shaped surface defect on GaAs layers grown by molecular beam epitaxy on GaAs substrates. The presence of microscopic defects in GaAs substrates, which are revealed by AB etching, is not essential to the formation of surface defects of this type. They are convex to the epilayer surface and have one dislocation including a screw component near propably formed by spiral growth. We have also studied the effects of growth rate and substrate misorientation on the elliptic-shaped defects. As the growth rate increases, the sizes of the defects become smaller and they disappear at a rate of 4 μm/h. They are not formed on substrates oriented 2° off the (100) towards the <110. We briefly discuss these growth condition dependences concerned with spiral growth." @default.
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• W2022881126 date "1993-04-01" @default.
• W2022881126 modified "2023-09-23" @default.
• W2022881126 title "Origin and formation mechanism of elliptic-shaped surface defect on GaAs layers grown by molecular beam epitaxy" @default.
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• W2022881126 doi "https://doi.org/10.1016/0022-0248(93)90478-f" @default.
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