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• W2022890567 endingPage "H174" @default.
• W2022890567 startingPage "H174" @default.
• W2022890567 abstract "Large-area, nanometer-scale Si field emitters have been fabricated by selective chemical etching of self-assembled Ge islands on Si. Taking advantage of the relatively low etching rate, uniform Ge islands act as virtual nanomasks for the underlying Si substrate. During selective chemical etching, Ge nanomasks shrink into small Ge-core islands, which determine the apex sharpness of the resulting Si pyramidal tips. The results demonstrate that Si pyramidal tips exhibited improved antireflective and electron field emission characteristics compared to as-grown Ge islands. The high field enhancement factor can be attributed to high tip density, nanoscale apex, and well-controlled spacing between Si pyramidal tips. This work offers a low cost alternative for designing and fabricating high efficiency Si-based field emitters or nanodevices." @default.
• W2022890567 created "2016-06-24" @default.
• W2022890567 creator A5000190926 @default.
• W2022890567 creator A5027805105 @default.
• W2022890567 creator A5080139441 @default.
• W2022890567 date "2010-01-01" @default.
• W2022890567 modified "2023-09-23" @default.
• W2022890567 title "Fabrication of Nanometer-Scale Si Field Emitters Using Self-Assembled Ge Nanomasks" @default.
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• W2022890567 doi "https://doi.org/10.1149/1.3267512" @default.
• W2022890567 hasPublicationYear "2010" @default.
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