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• W2022891369 startingPage "1048" @default.
• W2022891369 abstract "We study the quantum efficiency (η) and transition energy (Et) as a function of excitation density and temperature in (In,Ga)N/GaN multiple quantum wells (MQWs) fabricated by molecular-beam epitaxy (MBE) and metal-organic chemical-vapor deposition (MOCVD), as well as in an MBE-grown GaN/(Al,Ga)N MQW. A method based on cathodoluminescence spectroscopy is proposed to be suitable for a reproducible measurement of the power dependence of η and Et. The experimental results are fit to a recently developed model allowing for a distinction of localization and electric-field effects for η and Et, as well as for the extraction of the localization energy, density of localization centers, and radiative recombination rate of localized excitons. In the (In,Ga)N/GaN MQWs grown by MBE and MOCVD, we found a value of the localization energy of 34 and 100 meV, respectively. In the MBE-grown GaN/(Al,Ga)N MQW, the exciton recombination is dominated by quasifree excitons even at low temperatures." @default.
• W2022891369 created "2016-06-24" @default.
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• W2022891369 date "2003-01-15" @default.
• W2022891369 modified "2023-10-16" @default.
• W2022891369 title "Exciton localization and quantum efficiency—A comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells" @default.
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• W2022891369 doi "https://doi.org/10.1063/1.1529993" @default.
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