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- W2022897175 abstract "A series of bis-dimethyl-<i>n</i>-octylsilyl end-capped oligothiophenes consisting of two to six thiophene units have been synthesized using palladium-catalyzed Stille coupling reactions. These oligothiophenes have been characterized by <sup>1</sup>H-, <sup>13</sup>C-NMR and high resolution mass spectrometry. The UV-vis spectral data indicate that these silyl end-capped oligothiophenes have longer conjugation lengths as evidenced by the higher λ<sub>max</sub> values than the corresponding unsubstituted thiophene oligomers. The thermal analyses indicate that the bis-silylated oligothiphenes show lower melting point (<b>DSi-4T</b> = 80°C; <b>DSi-5T</b> = 115°C; <b>DSi-6T</b> = 182°C) than the corresponding dialkylated thiophene oligomers by 100°C and hexamer <b>DSi-6T</b> exhibits a liquid crystalline mesophase at 143°C. The α,ω-bis(dimethyl-<i>n</i>-octylsilyl)oligothiophenes have a remarkably high solubility in chloroform which are comparable to the corresponding α,ω-dihexyloligothiophenes. The remarkably increased solubility by these silyl end groups leads the bis-silylated oligothiophenes to be applicable to solution processable devices for thin film transisitor (TFT) by utilizing a spin coating technique. We fabricated devices by spin-coating α,ω-bis(dimethyloctylsilyl)sexithiophene <b>DSi-6T</b> from chlorobenzene, toluene, chloroform onto device test structures. But the OFETs using <b>DSi-6T</b> solved in chloroform produced the transistor behavior. The hexamer <b>DSi-6T</b>, showed promising behavior as a solution-deposited semiconductor, with mobility up to 0.014 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>." @default.
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- W2022897175 date "2007-09-13" @default.
- W2022897175 modified "2023-10-14" @default.
- W2022897175 title "Synthesis of bis-silylated oligothiophenes for solution-processable organic field effect transistors" @default.
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- W2022897175 doi "https://doi.org/10.1117/12.733452" @default.
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