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- W2022954887 abstract "Calculated results for charge transfer and low-temperature electron mobility in strained silicon grown epitaxially on relaxed Si1−xGex are presented versus the thickness of an undoped spacer layer and other structural and materials parameters. The indicated conduction band offset for Si on relaxed Si0.7Ge0.3 is 180±15 meV. Scattering by the remote doping impurities that supply the carriers is found to be the dominant scattering mechanism in high-mobility samples. Samples with enhanced interface scattering are expected to have a stronger temperature dependence of mobility." @default.
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- W2022954887 title "Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub>" @default.
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- W2022954887 doi "https://doi.org/10.1063/1.107684" @default.
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