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• W2022957058 abstract "Patterning isolated trenches for bright field layers such as the active layer has always been difficult for lithographers. This patterning is even more challenging for advanced technologies such as the 45-nm node where most of the process optimization is done for minimum pitch dense lines. Similar to the use of scattering-bars to assist isolated lines structures, we can use inverse Sub Resolution Assist Features (SRAF) to assist the patterning of isolated trenches structures. Full characterization studies on the C45 Active layer demonstrate the benefits and potential issues of this technique: Screen Inverse SRAF parameters (size, distance to main feature) utilizing optical simulation; Verify simulation predictions and ensure sufficient improvement in Depth of Focus and Exposure latitude with silicon process window analysis; Define Inverse SRAF OPC generation script parameters and validate, with accurate on silicon, measurement characterization of specific test patterns; Maskshop manufacturability through CD measurements and inspection capability. Finally, initial silicon results from a 45nm mask are given with suggestions for additional optimization of inverse SRAF for trenches." @default.
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• W2022957058 date "2007-05-03" @default.
• W2022957058 modified "2023-09-26" @default.
• W2022957058 title "Characterization of inverse SRAF for active layer trenches on 45-nm node" @default.
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• W2022957058 doi "https://doi.org/10.1117/12.728960" @default.
• W2022957058 hasPublicationYear "2007" @default.
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