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• W2022986598 abstract "The loss of atomic nitrogen due to surface and volume reactions in a parallel plate rf reactor was investigated using a pulsed N2 discharge and two-photon laser induced fluorescence detection of ground-state atomic nitrogen. Stainless-steel and aluminium electrode surfaces as well as silicon and boron nitride substrates were investigated for their reactivity with atomic nitrogen within the pulsed discharge environment at 1-5 Torr N2. Aluminium was found to have a surface loss rate of three to five times less than that of stainless-steel, while boron nitride had the lowest N atom recombination rate of the materials studied. The N atom recombination probability coefficient was found to have an inverse pressure dependence for each of the materials, with values ranging from 0.5 to 0.02%. The volume loss rate of N atoms was also quantified due to minute O2 impurities introduced into the pulsed rf N2 discharge." @default.
• W2022986598 created "2016-06-24" @default.
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• W2022986598 date "2000-06-16" @default.
• W2022986598 modified "2023-10-05" @default.
• W2022986598 title "Surface and volume loss of atomic nitrogen in a parallel plate rf discharge reactor" @default.
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• W2022986598 doi "https://doi.org/10.1088/0963-0252/9/3/302" @default.
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