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- W2023006180 abstract "Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density of 10<sup>16</sup>-10<sup>17</sup>cm<sup>-3</sup>. It has a slight increase after 900°C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed." @default.
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- W2023006180 date "2007-11-29" @default.
- W2023006180 modified "2023-10-16" @default.
- W2023006180 title "Native deep level defects in ZnO single crystal grown by CVT method" @default.
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- W2023006180 doi "https://doi.org/10.1117/12.760142" @default.
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