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- W2023074920 abstract "Abstract In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si 1 − x Ge x /Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N 2 O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures." @default.
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- W2023074920 date "2008-11-01" @default.
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- W2023074920 title "Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates" @default.
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- W2023074920 doi "https://doi.org/10.1016/j.tsf.2008.08.111" @default.
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