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• W2023087324 abstract "This letter presents the RF power performance of N-polar AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating SiC substrates at 10 and 4 GHz. Additionally, an Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -based etch-stop technology was demonstrated for improving the manufacturability of N-polar GaN HEMTs with Si <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</i> N <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</i> passivation. The reported output power densities of 16.7 W/mm at 10 GHz and 20.7 W/mm at 4 GHz represent the highest reported values so far for an N-polar device, at both of these frequencies. The improvements achieved in the RF output power density when compared with previously reported N-polar MISHEMTs can be attributed to high breakdown voltage of N-polar devices grown by MOCVD and high thermal conductivity of the SiC substrate." @default.
• W2023087324 created "2016-06-24" @default.
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• W2023087324 date "2012-01-01" @default.
• W2023087324 modified "2023-09-23" @default.
• W2023087324 title "Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $hbox{Al}_{2}hbox{O}_{3}$ Etch-Stop Technology" @default.
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• W2023087324 doi "https://doi.org/10.1109/led.2011.2173458" @default.
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