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• W2023101038 abstract "We have examined the mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi. We consider the role of the transition from group-V-rich to group-III-rich conditions, i.e., the stoichiometry threshold, in the presence of Bi. For As-rich GaAsBi growth, Bi acts as a surfactant, leading to the formation of droplet-free GaAsBi films. For films within 10% of the stoichiometric GaAsBi growth regime, surface Ga droplets are observed. However, for Ga-rich GaAsBi growth, Bi acts as an anti-surfactant, inducing Ga-Bi droplet formation. We propose a growth mechanism based upon the growth-rate-dependence of the stoichiometry threshold for GaAsBi." @default.
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• W2023101038 date "2013-01-28" @default.
• W2023101038 modified "2023-10-14" @default.
• W2023101038 title "Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi" @default.
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• W2023101038 doi "https://doi.org/10.1063/1.4789369" @default.
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