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- W2023114313 abstract "Two low reverse recovery charge solutions for 30-V power MOSFETs are proposed. One solution is a device consisting of a MOSFET and a Schottky barrier diode (SBD) in a single chip featuring a double epi structure to enhance the breakdown voltage. The other solution is a device with an integrated SBD in every unit cell that can achieve a high threshold voltage via the P <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-</sup> layer with Schottky contact. Both proposed devices exhibited low reverse recovery currents in simulations. Moreover, the surge voltage of the first device which we fabricated reduced by 58%, which enables the use of a lower voltage device and a reduction of the device loss." @default.
- W2023114313 created "2016-06-24" @default.
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- W2023114313 date "2013-05-01" @default.
- W2023114313 modified "2023-09-27" @default.
- W2023114313 title "Low reverse recovery charge 30-V power MOSFETs for DC-DC converters" @default.
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- W2023114313 doi "https://doi.org/10.1109/ispsd.2013.6694456" @default.
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