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- W2023114992 abstract "We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanced up to 56%. Compared to the reference, the n-GaN template grown on IHPDM-embedded structure also showed a reduction in the dislocation density by 57%, leading to an increase in photoluminescence intensity by 82%. The LED fabricated on IHPDM-embedded structure exhibited a reduction in the forward leakage current by one order of magnitude (<1.5 V) and an enhancement in the output power by 41%." @default.
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- W2023114992 date "2009-07-06" @default.
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- W2023114992 title "High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures" @default.
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- W2023114992 doi "https://doi.org/10.1063/1.3166868" @default.
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