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• W2023131080 abstract "Publisher’s Note 7 October 2013: This SPIE Proceedings paper has been updated with an erratum correcting several issues throughout the paper. The corrected paper was published in place of the earlier version on 11 June 2013. If you purchased the original version of the paper and no longer have access, please contact SPIE Digital Library Customer Service at CustomerService@SPIEDigitalLibrary.org for assistance.Uncooled IR bolometers form an integral part of thermal imaging cameras. Vanadium oxide material currently used for IR imaging has a resistivity between 0.1 and 1 ohm-cm and a temperature coefficient of resistance (TCR) between -1.4%K -1 to -2.4%K -1 . Higher TCR materials are desired, however, such materials inevitably have higher resistivity and therefore higher electrical resistance in a lateral resistor configuration. A high resistance leads to an increase in the Johnson-Nyquist noise of the bias-induced current, thereby limiting the performance of bolometers using high resistivity material. In this work, we demonstrate high resistivity, high TCR VO x and propose the use of a vertically integrated resistor configuration an alternate pixel structure design with lower Johnson noise when compared with the conventional lateral pixel design. Biased Target Ion Beam Deposition was used to deposit high resistivity vanadium oxide thin-films (~85 nm thick). Electrical characterization of lateral resistor structures showed resistivities ranging from 2 ⨯ 10 3 ohm-cm to 2.1 ⨯ 10 4 ohm-cm, TCR varying from -2.6%K -1 to -5%K -1 , Johnson noise (pixel resistance of 1.3GΩ) of 4.7 to 6μV/√Hz and 1/f noise (normalized Hooge’s parameter (α/n)) of 5 ⨯ 10 -21 to 5 ⨯ 10 -18 cm -3 . In contrast, the through-film resistor structures showed significantly higher resistivities at 3 ⨯ 10 4 Ohm-cm to 1.55 ⨯ 10 5 Ohm-cm, TCR similar to lateral resistive structure between -2.6%K -1 to -5.1%K -1 , immeasurably low Johnson noise (pixel resistance of 48KΩ) and normalized Hooge’s parameter ranging from to 5⨯10 -21 to 1⨯10 -18 cm -3 . These results indicate the possible use of through-film resistors as an alternative to the conventional lateral-resistor design currently used in uncooled imaging microbolometers." @default.
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• W2023131080 date "2013-06-11" @default.
• W2023131080 modified "2023-09-26" @default.
• W2023131080 title "Vertically integrated pixel microbolometers for IR imaging using high-resistivity VOx" @default.
• W2023131080 doi "https://doi.org/10.1117/12.2016292" @default.
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