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- W2023139543 abstract "This article investigates the role of the interfaces of CdS and In(OHx,Sy) buffer layers in thin film ZnO/buffer/Cu(In,Ga)Se2 heterojunction solar cells. The presence of acceptor defects at the ZnO/In(OHx,Sy) interface explains the poor performance of solar cells using the In(OHx,Sy) buffers. The standard CdS buffer has better quality at both interfaces to the ZnO window layer and to the Cu(In,Ga)Se2 absorber. By using a combination of buffer layers of thin CdS and In(OHx,Sy), the short circuit current density is improved by 2 mA cm−2 and thus, the efficiency is 1% higher than that of devices with the standard CdS buffer." @default.
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- W2023139543 date "2003-05-01" @default.
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- W2023139543 title "Influence of heterointerfaces on the performance of Cu(In,Ga)Se2 solar cells with CdS and In(OHx,Sy) buffer layers" @default.
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- W2023139543 doi "https://doi.org/10.1016/s0040-6090(03)00156-1" @default.
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