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• W2023143349 abstract "ZnO homojunction light-emitting diodes (LEDs), comprised of N–Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3V. The electroluminescence (EL) bands at 110K consisted of a near-band-edge emission at 3.18eV and a deep level emission at 2.58eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer." @default.
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• W2023143349 date "2007-09-10" @default.
• W2023143349 modified "2023-09-24" @default.
• W2023143349 title "ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers" @default.
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• W2023143349 doi "https://doi.org/10.1063/1.2783262" @default.
• W2023143349 hasPublicationYear "2007" @default.
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