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• W2023145751 abstract "The effects of nitrogen additives on the plasma hydrogenation of polycrystalline silicon thin film transistors (poly-Si TFTs) have been investigated with various radio-frequency (RF) power densities, substrate heating temperature, gas flow rates, as well as chamber pressures. The nitrogen-containing hydrogen (H2N2) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H2 hydrogenation. It is attributed to the passivation effect of the nitrogen radicals themselves and the promotion of the hydrogen plasma generation due to the radical collision. The passivation effects have been enhanced by properly chosen RF power density, gas flow rate and chamber pressure. Furthermore, the H2N2 plasma were also utilized to passivate the poly-Si TFTs with different grain structures." @default.
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• W2023145751 date "1995-06-01" @default.
• W2023145751 modified "2023-10-17" @default.
• W2023145751 title "Characterization of plasma passivation process for poly-Si thin film transistors (TFTs)" @default.
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• W2023145751 doi "https://doi.org/10.1016/0038-1101(94)00241-7" @default.
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