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- W2023159605 abstract "A number of modified DCPBH laser devices were realized, which can be driven as a single transistor (or as a number of parallel transistors). The devices allow direct and seperate measurement of various leakage components in DCPBH devices, i.e. electron- c.q. hole-hetero-barrier leakage and blocking layer leakage. Measurements on these devices lead to a good understanding of leakage phenomena and of device performance of DCPBH laser diodes. Measured data serve as input for accurate modelling of DCPBH devices." @default.
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- W2023159605 date "1986-07-09" @default.
- W2023159605 modified "2023-09-23" @default.
- W2023159605 title "Direct Measurement Of Leakage Currents In Long-Wavelength Buried Heterostructure Lasers" @default.
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- W2023159605 doi "https://doi.org/10.1117/12.951195" @default.
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