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• W2023169375 abstract "The intrinsic p-type ZnO thin films were prepared by controlling the oxygen partial pressure during growth. The E2 (high) mode at 432.2cm−1 appeared in the Raman spectrum of the film. The photoluminescence spectra taken at 77 K showed the emission band C in the violet region, which originated from zinc vacancy and varied in intensity in accordance with the quantity of the carrier concentration in the films. The N-doped p-type ZnO films were realized by N2 plasma. The Raman spectrum showed the dominant A1 (LO) mode at 580cm−1, that was the result of the host-lattice defects generated by N dopant rather than the N-related local vibration modes." @default.
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• W2023169375 date "2005-11-14" @default.
• W2023169375 modified "2023-10-11" @default.
• W2023169375 title "Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy" @default.
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• W2023169375 doi "https://doi.org/10.1063/1.2132528" @default.
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