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- W2023183681 abstract "The predominance of phonon-assisted band-band Auger recombination in highly doped silicon is demonstrated by showing that no recombination mechanism involving common (unavoidable) defects in silicon can yield carrier lifetimes that are consistent with the measured lifetimes, which exhibit an inverse-quadratic doping-density dependence, and/or with their temperature dependence. Both trap-assisted-Auger and Shockley-Read-Hall recombination mechanisms are considered, and dependences of the defect density on the doping density, which are implied by theory and experiment, are accounted for." @default.
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- W2023183681 date "1983-06-01" @default.
- W2023183681 modified "2023-10-12" @default.
- W2023183681 title "Carrier recombination and lifetime in highly doped silicon" @default.
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- W2023183681 doi "https://doi.org/10.1016/0038-1101(83)90173-9" @default.
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