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- W2023185564 abstract "In this research, Ge/GaAs wafers were successfully bonded at room temperature by means of surface activated bonding (SAB) using fast atom beam (FAB) in high vacuum condition. Scanning acoustic microscope (SAM) observation shows wafers were bonded over almost the entire area. After 250°C annealing in N2 atomosphere, interfacial voids were reduced. Bonding strength of the interface archived 4.87MPa and most of fractured surface was GaAs. Transmission electron microscope (TEM) observation of bonding interface shows that Ge/GaAs were bonded at atomic level and amorphous layer with thickness of about 5nm was formed. Current-voltage (I-V) characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of bonded interface achieved 0.54Ωcm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at 0V and 0.16Ωcm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at 0.1V." @default.
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- W2023185564 date "2014-04-01" @default.
- W2023185564 modified "2023-10-14" @default.
- W2023185564 title "Surface activated Ge/GaAs wafer bonding for multi-junction solar cells" @default.
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- W2023185564 doi "https://doi.org/10.1109/icep.2014.6826774" @default.
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