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- W2023205910 abstract "We studied electrical parameters of Sn/p–Si Schottky barrier diodes (SBDs) by using in situ current–voltage (I–V) and capacitance–voltage (C–V) measurements under γ-irradiation at room temperature. The devices were held under zero bias during γ-irradiation with dose rate 0.25 kGy/h, and the total dose range was 0–45 kGy. Irradiation results indicated that these devices may have applications as radiation sensors in order to detect the low-energy γ radiation." @default.
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- W2023205910 date "2008-04-01" @default.
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- W2023205910 title "γ-Irradiation-induced changes at the electrical characteristics of Sn/p–Si Schottky contacts" @default.
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- W2023205910 doi "https://doi.org/10.1016/j.vacuum.2007.11.006" @default.
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