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- W2023211067 abstract "We report on optimizing the GaAs capping layer growth of 1.3 mu m InAs quantum dots (QDs) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. The initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees C, which is the same for the growth of both the QDs and a 5-nm-thick In0.15Ga0.85As strain-reducing capping layer on the QDs, while the remaining part is grown at a higher temperature of 560 degrees C after a rapid temperature rise and subsequent annealing period at this temperature. The capping layer is deposited at the low temperatures ( = 450s) during the capping, resulting in significantly enhanced photoluminescence from the QDs. This significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers. (C) 2008 Elsevier B.V. All rights reserved." @default.
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- W2023211067 date "2008-12-01" @default.
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- W2023211067 title "Optimizing the GaAs capping layer growth of 1.3μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures" @default.
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- W2023211067 doi "https://doi.org/10.1016/j.jcrysgro.2008.09.173" @default.
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