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- W2023230596 abstract "The correlations between structural, chemical, electrical, optical properties of in situ phosphorus-doped hydrogenated microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition have been studied by high-resolution transmission electron microscopy, secondary-ion mass spectrometry, electrical conductivity, and optical measurements. Microcrystallinity has been observed at a substrate temperature as low as 100 °C with a 1% dilution of (1% PH3/SiH4) in H2. In situ phosphorous-doped hydrogenated microcrystalline silicon is best grown at 200–300 °C in terms of microstructure, H and P content, and dopant activation. The effects of thermal processing and the use of silicon nitride cap deposited prior to anneal on the structure and properties of phosphorous-doped hydrogenated microcrystalline silicon are also reported. The use of a silicon nitride capping layer is shown to inhibit recrystallization of hydrogenated microcrystalline silicon during rapid thermal anneal." @default.
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- W2023230596 date "1991-04-15" @default.
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- W2023230596 title "Structure, properties, and thermal stability ofinsituphosphorus‐doped hydrogenated microcrystalline silicon prepared by plasma‐enhanced chemical vapor deposition" @default.
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