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- W2023243523 abstract "This paper analyzes the impacts of Random Telegraph Noise (RTN) caused by a single acceptor-type trap on Tunnel FET (TFET) based devices, 8T SRAM cell and sense amplifiers. 3D atomistic TCAD simulations accounting for the impact of localized/negatively-charged trap are utilized to assess the dependence of RTN amplitude (ΔI <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> ) on trap location and device geometry. Our results indicate that significant RTN impact occurs for trap located near the tunneling junction. The device design strategies (thinner EOT, W <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fin</sub> and longer L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>eff</sub> ) to improve TFET device characteristics are found to increase the susceptibility to RTN. Furthermore, TFET-based standard 8T SRAM cell and several commonly used sense amplifiers including Current Latch Sense Amplifier (CLSA), Voltage Latch Sense Amplifier (VLSA), and single-ended large-signal inverter sense amplifier are examined using atomistic 3D TCAD mixed-mode simulations. The presence of RTN is shown to cause extra ~16% variations in cell stability (at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dd</sub> = 0.3V) and additional ~80mV variation in offset voltage for sense amplifiers at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dd</sub> = 0.5V." @default.
- W2023243523 created "2016-06-24" @default.
- W2023243523 creator A5001587364 @default.
- W2023243523 creator A5025664346 @default.
- W2023243523 creator A5057265167 @default.
- W2023243523 creator A5083596674 @default.
- W2023243523 creator A5084582698 @default.
- W2023243523 date "2013-04-01" @default.
- W2023243523 modified "2023-10-14" @default.
- W2023243523 title "Investigation of single-trap-induced random telegraph noise for tunnel FET based devices, 8T SRAM cell, and sense amplifiers" @default.
- W2023243523 cites W1753784006 @default.
- W2023243523 cites W1876422086 @default.
- W2023243523 cites W1997643851 @default.
- W2023243523 cites W2009624223 @default.
- W2023243523 cites W2026617335 @default.
- W2023243523 cites W2032197740 @default.
- W2023243523 cites W2046515116 @default.
- W2023243523 cites W2069803849 @default.
- W2023243523 cites W2073306128 @default.
- W2023243523 cites W2078066929 @default.
- W2023243523 cites W2106482808 @default.
- W2023243523 cites W2128125131 @default.
- W2023243523 cites W2140910268 @default.
- W2023243523 cites W2143451736 @default.
- W2023243523 cites W2153830758 @default.
- W2023243523 doi "https://doi.org/10.1109/irps.2013.6532068" @default.
- W2023243523 hasPublicationYear "2013" @default.
- W2023243523 type Work @default.
- W2023243523 sameAs 2023243523 @default.
- W2023243523 citedByCount "2" @default.
- W2023243523 countsByYear W20232435232014 @default.
- W2023243523 countsByYear W20232435232017 @default.
- W2023243523 crossrefType "proceedings-article" @default.
- W2023243523 hasAuthorship W2023243523A5001587364 @default.
- W2023243523 hasAuthorship W2023243523A5025664346 @default.
- W2023243523 hasAuthorship W2023243523A5057265167 @default.
- W2023243523 hasAuthorship W2023243523A5083596674 @default.
- W2023243523 hasAuthorship W2023243523A5084582698 @default.
- W2023243523 hasConcept C115961682 @default.
- W2023243523 hasConcept C119599485 @default.
- W2023243523 hasConcept C121332964 @default.
- W2023243523 hasConcept C127413603 @default.
- W2023243523 hasConcept C143141573 @default.
- W2023243523 hasConcept C154945302 @default.
- W2023243523 hasConcept C184720557 @default.
- W2023243523 hasConcept C194257627 @default.
- W2023243523 hasConcept C41008148 @default.
- W2023243523 hasConcept C46362747 @default.
- W2023243523 hasConcept C49040817 @default.
- W2023243523 hasConcept C99498987 @default.
- W2023243523 hasConceptScore W2023243523C115961682 @default.
- W2023243523 hasConceptScore W2023243523C119599485 @default.
- W2023243523 hasConceptScore W2023243523C121332964 @default.
- W2023243523 hasConceptScore W2023243523C127413603 @default.
- W2023243523 hasConceptScore W2023243523C143141573 @default.
- W2023243523 hasConceptScore W2023243523C154945302 @default.
- W2023243523 hasConceptScore W2023243523C184720557 @default.
- W2023243523 hasConceptScore W2023243523C194257627 @default.
- W2023243523 hasConceptScore W2023243523C41008148 @default.
- W2023243523 hasConceptScore W2023243523C46362747 @default.
- W2023243523 hasConceptScore W2023243523C49040817 @default.
- W2023243523 hasConceptScore W2023243523C99498987 @default.
- W2023243523 hasLocation W20232435231 @default.
- W2023243523 hasOpenAccess W2023243523 @default.
- W2023243523 hasPrimaryLocation W20232435231 @default.
- W2023243523 hasRelatedWork W1994497421 @default.
- W2023243523 hasRelatedWork W2126521283 @default.
- W2023243523 hasRelatedWork W223048161 @default.
- W2023243523 hasRelatedWork W2535056989 @default.
- W2023243523 hasRelatedWork W2748952813 @default.
- W2023243523 hasRelatedWork W2899084033 @default.
- W2023243523 hasRelatedWork W3049720184 @default.
- W2023243523 hasRelatedWork W3208979318 @default.
- W2023243523 hasRelatedWork W3216553451 @default.
- W2023243523 hasRelatedWork W2186772480 @default.
- W2023243523 isParatext "false" @default.
- W2023243523 isRetracted "false" @default.
- W2023243523 magId "2023243523" @default.
- W2023243523 workType "article" @default.