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- W2023246845 abstract "Electron density and mobility curves have been simulated for buried strained-Si/SiGe MOSFET, A Monte Carlo simulator including electron quantization, nonparabolicity and a new model for Coulomb scattering has been, used at different temperatures. It has been demonstrated that the improved confinement of the electron charge in the strained-Si quantum well at low temperatures greatly reduces Coulomb scattering in these structures. The inversion charge in the superficial channel is reduced in comparison with operation at room temperature. Therefore, apart from lower Coulomb scattering rates, surface-roughness and phonon scattering is also lower." @default.
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- W2023246845 date "1998-06-01" @default.
- W2023246845 modified "2023-09-27" @default.
- W2023246845 title "Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs" @default.
- W2023246845 doi "https://doi.org/10.1051/jp4:1998314" @default.
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