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• W2023253320 abstract "The effect of postannealing temperature (500, 600 and 700°C) on the band alignments and interfacial structures of Al2O3 films grown on Ge by atomic layer deposition was investigated by X-ray photoelectron spectroscopy and electrical measurements. With increasing postannealing temperature, the reaction between Al2O3 and Ge becomes serious and the valence-band offsets of Al2O3/Ge interface is observed to upshift. The conduction-band offsets at the interface of Al2O3/Ge without and with postannealing temperatures at 500, 600 and 700°C are estimated to be 2.90, 2.75, 2.59 and 2.41 eV, respectively." @default.
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• W2023253320 date "2012-01-01" @default.
• W2023253320 modified "2023-09-28" @default.
• W2023253320 title "Effects of Postannealing Temperature on the Band Alignments and Interfacial Properties of Atomic Layer Deposited Al2O3 on Ge Substrates" @default.
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• W2023253320 doi "https://doi.org/10.1080/10584587.2012.663653" @default.
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