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- W2023256927 abstract "The path to commercializing a 4H - SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H - SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a high yielding process with V F as low as 3.9 V @ 100 A/cm 2 . These 10 kV diodes demonstrate pulsed current handling capability up to 328 A which represents over 3 MW of pulsed power. Furthermore, incorporation of two independent basal plane dislocation reduction reduction processes (LBPD 1 and LBPD 2) have produced a large number of devices that exhibit a high degree of forward voltage stability. The more benign LBPD 2 process yields wafers with better reverse blocking capability resulting in a total yield (forward, 10 kV blocking, and drift) of >20% for 8.7 mm × 8.7 mm power PiN diode chips—the largest SiC chip reported to date." @default.
- W2023256927 created "2016-06-24" @default.
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- W2023256927 date "2004-09-01" @default.
- W2023256927 modified "2023-10-16" @default.
- W2023256927 title "HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES" @default.
- W2023256927 cites W2032940966 @default.
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- W2023256927 doi "https://doi.org/10.1142/s0129156404002958" @default.
- W2023256927 hasPublicationYear "2004" @default.
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