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W2023263522 abstract "Si1 − yCy epilayers have been grown at 600°C on Si(001) associating solid source molecular beam epitaxy for Si supply and C2H4 thermal cracking or CH4 ECR (electron cyclotron resonance) H2 plasma decomposition as C sources. The samples have been analyzed in situ by X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), and X-ray photoelectron diffraction (XPD) and ex situ by Rutherford backscattering (RBS), Raman and IR spectroscopies. Increasing C content degrades the crystalline quality; however, up to y values ranging roughly from 3% to 5%, depending on sample thickness and used C precursor, the layers grow epitaxially as revealed by LEED spots, structured Si 2p XPD angular scans and RBS measurements. The relevant C 1s binding energy, indicative of SiC bonds, excludes the presence of CC bonds and no silicon carbide precipitation could be detected. Nevertheless, even in the C-concentration range of good epitaxial growth, neither C 1s XPD polar profiles with Si cubic symmetry, nor marked local vibrational mode at 604 cm−1 in Raman or IR could be detected. These observations prove that, at low growth temperature, unexpectedly high amounts of C can be accommodated in a monocrystalline Si lattice via an incorporation scheme different from the usually invoked substitutional mode." @default.
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W2023263522 date "1995-12-01" @default.
W2023263522 modified "2023-09-25" @default.
W2023263522 title "Synthesis of epitaxial Si1 − yCy alloys on Si(001) with high level of non-usual substitutional carbon incorporation" @default.
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W2023263522 doi "https://doi.org/10.1016/0022-0248(95)00361-4" @default.
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