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• W2023263715 abstract "Abstract We have applied dynamic Monte Carlo simulations to the synthesis of a-C:H films by PBII. Like our previous model, we assumed a surface reaction layer consisted of one or two monolayers of a-C:H, in which very low threshold displacement energies are used, so atoms are knocked on by the collisions with energetic ions much easier than in the bulk substrate. Only atoms with energy higher than the barrier can penetrate into the subsurface. The change from the previous model is in the treatment of sp 3 state forming. Our new model is based on the subplantation model proposed by J. Robertson [1] . The sp 3 state formation was assumed resulted from the density increase. In the subsurface, among the penetrated C atoms, only atoms with low energy which is not enough to induce collision cascade form sp 3 state together with the surrounding C atoms and the other C atoms with higher energy form sp 2 state because of the density relaxation induced by the dense collision cascades. In addition to the above assumption, release of the displaced H atom after the subsequent collision cascade is assumed. The calculation is centered on how the sp 3 fraction and the H concentration, and the growth rate depend on the incident energy, the ion/neutral ratio, threshold energy of sp 3 formation. The energy dependence obtained for both sp 3 fraction and H concentration agreed well with the experimental data." @default.
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• W2023263715 date "2003-03-01" @default.
• W2023263715 modified "2023-09-24" @default.
• W2023263715 title "Dynamic MC simulation for a-C:H deposition in methane plasma based on subplantation model" @default.
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• W2023263715 doi "https://doi.org/10.1016/s0925-9635(02)00223-6" @default.
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