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• W2023263986 abstract "A Cu(In,Ga)S2-based solar cell with a confirmed efficiency of 12.6% together with an open circuit voltage of 879 mV, prepared from sputtered metals subsequently sulfurized using rapid thermal processing in sulfur vapor, is reported. The performance of the new cell is superior to those obtained previously with multi-source evaporated absorbers. We show that by carefully adjusting the temperature profile, good absorber properties could be transferred from a long process to a rapid thermal process. The improved efficiency is due to an appropriate degree of gallium diffusion toward the surface, which could be achieved despite the short sulfurization time. Absorber and solar cell characteristics are presented." @default.
• W2023263986 created "2016-06-24" @default.
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• W2023263986 date "2011-03-01" @default.
• W2023263986 modified "2023-09-30" @default.
• W2023263986 title "12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal process" @default.
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• W2023263986 doi "https://doi.org/10.1016/j.solmat.2010.11.003" @default.
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