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- W2023264132 startingPage "L435" @default.
- W2023264132 abstract "Using low defect density n+-Al0.4Ga0.6N buffer layers we fabricated AlGaN p-n junction light emitting diodes over sapphire substrates with peak emission at 285 nm. Powers as high as 0.15 mW were measured at 400 mA pulse pumping." @default.
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- W2023264132 date "2002-04-15" @default.
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- W2023264132 title "Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm" @default.
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- W2023264132 doi "https://doi.org/10.1143/jjap.41.l435" @default.
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